Suzanne Martin, Lorin M. Hitt, James J. Rosenberg
Martin, Suzanne, Hitt, Lorin M., and James Rosenberg (1989) “p-Channel Germanium MOSFETs with High Channel Mobility,” IEEE Electron Device Letters 10(7, July): 325-326
Publication year: 1989

The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm^2/V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.

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